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| PD - 94600 HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRF5NJZ34 BVDSS IRF5NJZ34 55V, N-CHANNEL RDS(on) 0.04 ID 22A* 55V Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 22* 16 88 40 0.32 20 43 22 4.0 1.8 -55 to 150 300 (for 5 s) 1.0 Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 02/07/03 IRF5NJZ34 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 55 -- -- 2.0 8.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.054 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.04 4.0 -- 25 250 100 -100 34 7.0 14 12 28 30 30 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, I D = 250A VGS = 10V, ID = 16A VDS = VGS, ID = 250A VDS = 10V, IDS = 16A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 22A VDS = 44V VDD = 28V, ID = 22A, VGS =10V, RG = 13 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 695 252 100 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 22* 88 1.6 86 200 Test Conditions A V nS nC Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max -- -- 3.13 Units C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5NJZ34 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID, Drain-to-Source Current (A) 100 10 ID , Drain-to-Source Current (A) 100 4.5V 20s PULSE WIDTH Tj = 25C 10 4.5V 20s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 0.1 1 10 100.0 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 T J = 25C T J = 150C 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 22A ID , Drain-to-Source Current ( ) 1.5 10 1.0 0.5 VDS = 25V 15 20s PULSE WIDTH 1.0 4 5 6 7 8 9 10 11 12 VGS, Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5NJZ34 1200 VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds 12 ID = 22A VDS = 44V VDS = 27V VDS= 11V 8 800 Ciss 600 Coss 400 VGS, Gate-to-Source Voltage (V) 100 1000 Crss = C gd Coss = C + Cgd ds C, Capacitance (pF) 4 200 Crss 0 1 10 0 0 4 8 12 16 20 24 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current ( ) T J = 150C T J = 25C 10 ID, Drain-to-Source Current (A) 100 10 100s 1ms 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 10ms VGS = 0V 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5NJZ34 30 LIMITED BY PACKAGE 25 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 20 -VDD VGS 15 Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 5 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5NJZ34 80 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 60 TOP BOTTOM ID 10A 14A 22A VDS L D R IV E R 40 RG 2VGS 0V tp D .U .T. IA S + - VD D A 0 .0 1 20 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) V (B R )D SS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5NJZ34 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=0.19mH Peak IAS = 22A, RG= 25 ISD 22A, di/dt 270 A/s, Pulse width 300 s; Duty Cycle 2% VDD 55V, TJ 150C Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 www.irf.com 7 |
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